Technical overview
Luxin-Semi power MOSFET products adopt advanced Shield Gate Trench technology, while reducing the specific on-state resistance (Ronsp) and gate charge (Qg), resulting in a smaller figure of merit (FOM) (Rdson*Qg). This advanced technology enhances the device's switching speed and reduces switching losses. When combined with cutting-edge terminal design and packaging technology, the devices exhibit superior performance and enhanced reliability.
Features and advantages:
1. Very low Rdson
2. Very low Qg and Qgd
3. Faster switching speed
4. Lower switching loss
5. UIS tolerance 100% factory test
Product model
Contact us
021-5087 0188
sales@lu-semi.com
Room 301, Building 15, Peninsula Science and Technology Park, 88 Darwin Road, Pudong New Area, Shanghai
www.lu-semi.com
www.lu-semi.com
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